Product Summary

The SIA413DJ-T1-GE3 is a P-Channel 12-V (D-S) MOSFET.

Parametrics

SIA413DJ-T1-GE3 absolute maximum ratings: (1)Drain-Source Voltage VDS: - 12V; (2)Gate-Source Voltage VGS: ± 8V; (3)Continuous Drain Current (TJ = 150℃) TC = 25℃ ID: - 12A; (4)Pulsed Drain Current IDM: - 40A; (5)Continuous Source-Drain Diode Current TC = 25℃ IS: - 12A; (6)Maximum Power Dissipation TC = 25℃ PD: 19 W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: - 55℃ to 150℃; (8)Soldering Recommendations (Peak Temperature): 260℃.

Features

SIA413DJ-T1-GE3 features: (1)TrenchFET Power MOSFET; (2)New Thermally Enhanced PowerPAK SC-70 Package; (3)Small Footprint Area; (4)Low On-Resistance.

Diagrams

SIA413DJ-T1-GE3 package dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SIA413DJ-T1-GE3
SIA413DJ-T1-GE3
Vishay/Siliconix
MOSFET 12V 12A 19W 29mohm @ 4.5V
Data Sheet
0-1: $0.62
1-10: $0.49
10-100: $0.43
100-250: $0.38
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SIA400EDJ-T1-GE3
SIA400EDJ-T1-GE3
Vishay/Siliconix
MOSFET 30V 12A 19.2W 19mOhms @ 4.5V
Data Sheet
0-1: $0.19
1-10: $0.17
10-100: $0.14
100-250: $0.13
SIA406DJ
SIA406DJ
Other

Data Sheet
Negotiable 
SIA406DJ-T1-GE3
SIA406DJ-T1-GE3
Vishay/Siliconix
MOSFET 12V 4.5A 19W 19.8mohm @ 4.5V
Data Sheet
0-1: $0.32
1-10: $0.22
10-100: $0.19
100-250: $0.16
SiA408DJ
SiA408DJ
Other

Data Sheet
Negotiable 
SIA408DJ-T1-E3
SIA408DJ-T1-E3
Vishay/Siliconix
MOSFET 30V 4.5A 17.9W
Data Sheet
Negotiable 
SIA408DJ-T1-GE3
SIA408DJ-T1-GE3
Vishay/Siliconix
MOSFET 30V 4.5A 17.9W 36mohm @ 10V
Data Sheet
0-1: $0.59
1-10: $0.47
10-100: $0.42
100-250: $0.37