(China (Mainland))
Product Summary
The ATF-54143-TR1G is a Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package.
Parametrics
ATF-54143-TR1G absolute maximum ratings: (1)VDS Drain - Source Voltage: 5V; (2)VGS Gate - Source Voltage: -5 to 1V; (3)VGD Gate Drain Voltage: 5V; (4)IDS Drain Current: 120mA; (5)Pdiss Total Power Dissipation: 360mW; (6)Pin max. RF Input Power: 10dBm; (7)IGS Gate Source Current: 2mA; (8)TCH Channel Temperature: 150; (9)TSTG Storage Temperature: -65 to 150℃; (10)θjc Thermal Resistance: 162℃/W.
Features
ATF-54143-TR1G features: (1)High linearity performance; (2)Enhancement Mode Technology; (3)Low noise figure; (4)Excellent uniformity in product specifications; (5)800 micron gate width; (6)Low cost surface mount small plastic package SOT-343 (4 lead SC-70); (7)Tape-and-Reel packaging option available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 ATF-54143-TR1G |
Avago Technologies |
Transistors RF GaAs Transistor GaAs Single Voltage |
Data Sheet |
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ATF-10100 |
Other |
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Data Sheet |
Negotiable |
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ATF-10136 |
Other |
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Data Sheet |
Negotiable |
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ATF-10170 |
Other |
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Data Sheet |
Negotiable |
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ATF-10236 |
Other |
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Data Sheet |
Negotiable |
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ATF-10736 |
Other |
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Data Sheet |
Negotiable |
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ATF-10XXX |
Other |
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Data Sheet |
Negotiable |
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