(China (Mainland))
Product Summary
The SI7456DP-T1-E3 is an N-Channel 100-V (D-S) MOSFET.
Parametrics
SI7456DP-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 100 V; (2)Gate-Source Voltage VGS: ± 20 V; (3)Continuous Drain Current (TJ = 150℃) ID: 5.7 A; (4)Pulsed Drain Current IDM: 40 A; (5)Avalanche Current L = 0.1 mH IAS: 30 A; (6)Single Avalanche Energy (Duty Cycle ≤ 1 %) EAS: 45 mJ; (7)Continuous Source Current (Diode Conduction) IS: 1.6 A; (8)Maximum Power Dissipationa PD: 1.9 W; (9)Operating Junction and Storage Temperature Range TJ, Tstg: - 55℃ to 150℃.
Features
SI7456DP-T1-E3 features: (1)Halogen-free According to IEC 61249-2-21 Available; (2)TrenchFET Power MOSFETs; (3)New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile; (4)PWM Optimized for Fast Switching; (5)100 % Rg Tested.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 SI7456DP-T1-E3 |
Vishay/Siliconix |
MOSFET 100V 9.3A 5.2W |
Data Sheet |
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Pricing (USD) |
Quantity | ||||||||||||
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MOSFET 20V 11A 3.8W |
Data Sheet |
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SI7401DN-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 11A 3.8W |
Data Sheet |
Negotiable |
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Vishay/Siliconix |
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Data Sheet |
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SI7402DN-T1-GE3 |
Vishay/Siliconix |
MOSFET 12V 20A 3.8W 5.7mohm @ 4.5V |
Data Sheet |
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Si7403BDN |
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Data Sheet |
Negotiable |
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Data Sheet |
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