(China (Mainland))
Product Summary
The SI4403BDY-T1-E3 is a P-Channel 1.8-V (G-S) MOSFET.
Parametrics
SI4403BDY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: - 20 V; (2)Gate-Source Voltage VGS: ± 8 V; (3)Continuous Drain Current (TJ = 150℃) a ID: - 7.3 A; (4)Pulsed Drain Current IDM: - 30 A; (5)Continuous Source Current (Diode Conduction) a IS: - 1.3 A; (6)Maximum Power Dissipation a PD: 1.35 W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: - 55 to 150℃.
Features
SI4403BDY-T1-E3 features: (1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET Power MOSFETs; (3)Compliant to RoHS Directive 2002/95/EC.
Diagrams
| Image | Part No | Mfg | Description |  |
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 SI4403BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 9A 2.5W |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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Quantity | ||||||||||||
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Si4401BDY |
Other |
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Data Sheet |
Negotiable |
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SI4401BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 40V 10.5A 0.014Ohm |
Data Sheet |
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SI4401BDY-T1-GE3 |
Vishay/Siliconix |
MOSFET 40V 10.5A 2.9W 14mohm @ 10V |
Data Sheet |
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SI4401DY |
Vishay/Siliconix |
MOSFET 40V 10.5A 3W |
Data Sheet |
Negotiable |
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SI4401DY-E3 |
Vishay/Siliconix |
MOSFET 40V 10.5A 3W |
Data Sheet |
Negotiable |
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SI4401DY-T1 |
Vishay/Siliconix |
MOSFET 40V 10.5A 3W |
Data Sheet |
Negotiable |
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