(China (Mainland))
Product Summary
The SI1865DL-T1-E3 is a P-channel MOSFET.
Parametrics
SI1865DL-T1-E3 absolute maximum ratings: (1)Input Voltage VIN: 8 V; (2)ON/OFF Voltage VON/OFF: 8 V; (3)Load Current Cintinuous a,b IL: ± 1.2 A; (4)Load Current Pulsed b, c: ± 3 A; (5)Continuous Intrinsic Diode Conduction a IS: - 0.4 A; (6)Maximum Power Dissipation a PD: 0.4 W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: - 55℃ to 150℃; (8)ESD Rating, MIL-STD-833D Human Body Model (100 pF, 1500 Ω) ESD: 2 kV.
Features
SI1865DL-T1-E3 features: (1)215 mΩ Low rDS(on) TrenchFET; (2)1.8 to 8 V Input; (3)1.5 to 8 V Logic Level Control; (4)Low Profile, Small Footprint SC70-6 Package; (5)2000 V ESD Protection On Input Switch, VON/OFF; (6)Adjustable Slew-Rate; (7)1.8 V Rated.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 SI1865DL-T1-E3 |
Vishay/Siliconix |
MOSFET 1.8-8V 1.2A |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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Si1865DL |
Other |
|
Data Sheet |
Negotiable |
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SI1865DL-T1 |
Vishay/Siliconix |
MOSFET 1.8-8V 1.2A |
Data Sheet |
Negotiable |
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SI1865DL-T1-E3 |
Vishay/Siliconix |
MOSFET 1.8-8V 1.2A |
Data Sheet |
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SI1867DL-T1-E3 |
Vishay/Siliconix |
MOSFET 1.8-8.0V w/Lvl-Shift |
Data Sheet |
Negotiable |
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Si1869DH |
Other |
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Data Sheet |
Negotiable |
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SI1869DH-T1-E3 |
Vishay/Siliconix |
MOSFET LOAD SWITCH 1.8V RA W/ LEVEL SHIFT |
Data Sheet |
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