(China (Mainland))
Product Summary
The NDS332P is a P-Channel logic level enhancement mode power field effect transistor produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. The NDS332P is particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Parametrics
NDS332P absolute maximum ratings: (1)VDSS, Drain-Source Voltage: -20 V; (2)VGSS, Gate-Source Voltage - Continuous: ±8 V; (3)ID, Drain Current, Continuous (Note 1a): -1 A; Pulsed: -10A; (4)PD, Maximum Power Dissipation (Note 1a): 0.5 W; (Note 1b): 0.46W; (5)TJ,TSTG Operating and Storage Temperature Range: -55 to 150℃.
Features
NDS332P features: (1)-1 A, -20 V, RDS(ON) = 0.41 W @ VGS= -2.7 V, RDS(ON) = 0.3 W @ VGS = -4.5 V; (2)Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.0V; (3)Proprietary package design using copper lead frame for superior thermal and electrical capabilities; (4)High density cell design for extremely low RDS(ON); (5)Exceptional on-resistance and maximum DC current capability; (6)Compact industry standard SOT-23 surface Mount package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 NDS332P |
Fairchild Semiconductor |
MOSFET SOT-23 P-CH LOGIC |
Data Sheet |
|
|
||||||||||||
 |
NDS332P_D87Z |
Fairchild Semiconductor |
MOSFET P-Ch LL FET Enhancement Mode |
Data Sheet |
Negotiable |
|
||||||||||||
|
NDS332P_Q |
Fairchild Semiconductor |
MOSFET SOT-23 P-CH LOGIC |
Data Sheet |
|
|
||||||||||||
