Product Summary

The FDD6685 is a 30V P-Channel PowerTrench MOSFET. It is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. The FDD6685 has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

Parametrics

FDD6685 absolute maximum ratings: (1)VDSS Drain-Source Voltage: –30 V; (2)VGSS Gate-Source Voltage: ±25 V; (3)ID Continuous Drain Current @TC=25℃: -40A; (4)ID Continuous Drain Current @TA=25℃: -11A; (5)ID Continuous Drain Current Pulsed, PW ≤ 100μs: –100A; (6)PD Power Dissipation for Single Operation: 52W; (7)TJ, TSTG Operating and Storage Junction Temperature Range: –55℃ to +175℃; (8)RqJC Thermal Resistance, Junction-to-Case: 2.9℃/W; (9)RqJA Thermal Resistance, Junction-to-Ambient: 40℃/W; (10)RqJA Thermal Resistance, Junction-to-Ambient: 96℃/W.

Features

FDD6685 features: (1)Fast switching speed; (2)High performance trench technology for extremely low RDS(ON); (3)High power and current handling capability; (4)Qualified to AEC Q101.

Diagrams

FDD6685 waveform

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FDD6685
FDD6685
Fairchild Semiconductor
MOSFET 30V P-Channel PowerTrench
Data Sheet
0-1: $0.62
1-25: $0.49
25-100: $0.45
100-250: $0.39
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FDD6030BL
FDD6030BL
Fairchild Semiconductor
MOSFET 30V N-Ch PowerTrench
Data Sheet
Negotiable 
FDD6030L
FDD6030L
Fairchild Semiconductor
MOSFET 30V N&P-Channel Power Trench
Data Sheet
Negotiable 
FDD6030L_Q
FDD6030L_Q
Fairchild Semiconductor
MOSFET 30V N&P-Channel Power Trench
Data Sheet
Negotiable 
FDD6035AL
FDD6035AL
Fairchild Semiconductor
MOSFET N-Ch PowerTrench Logic Level
Data Sheet
Negotiable 
FDD6035AL_Q
FDD6035AL_Q
Fairchild Semiconductor
MOSFET N-Ch PowerTrench Logic Level
Data Sheet
Negotiable 
FDD6296
FDD6296
Fairchild Semiconductor
MOSFET 30V N-Ch PowerTrench Fast Switching
Data Sheet
Negotiable