Product Summary
The BC868,115 is an NPN medium power transistor in a SOT89 plastic package.
Parametrics
BC868,115 absolute maximum ratings: (1)Collector-Base Voltage VCBO: 32 V; (2)Collector-Emitter Voltage VCEO: 20 V; (3)Emitter-Base Voltage VEBO: 5 V; (4)Peak Pulse Current ICM: 2 A; (5)Continuous Collector Current IC: 1 A; (6)Power Dissipation at Tamb =25℃ Ptot: 1 W; (7)Operating and Storage Temperature Range Tj:Tstg: -65℃ to +150℃.
Features
BC868,115 features: (1)suitable for general af applications and class B audio output stages upto 3W; (2)high hFE and low saturation voltage; (3)partmarking details – CAC.
Diagrams
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![]() BC868,115 |
![]() NXP Semiconductors |
![]() Transistors Bipolar (BJT) NPN 20V 1A |
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![]() BC860 |
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