Product Summary

The SI4850EY-T1-E3 is an N-Channel Reduced Qg, Fast Switching MOSFET.

Parametrics

SI4850EY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 60 V; (2)Gate-Source Voltage VGS: ± 20 V; (3)Continuous Drain Current (TJ = 175℃) ID: 6.0 A; (4)Pulsed Drain Current IDM: 40 A; (5)Avalanche Current IAS: 15 A; (6)Single Pulse Avalanche Energy EAS: 11 mJ; (7)Maximum Power Dissipationa PD: 1.7 W; (8)Operating Junction and Storage Temperature Range TJ, Tstg: - 55℃ to 175℃.

Features

SI4850EY-T1-E3 features: (1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET Power MOSFETs; (3)175℃ Maximum Junction Temperature; (4)Compliant to RoHS Directive 2002/95/EC.

Diagrams

SI4850EY-T1-E3 pin configuration

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SI4850EY-T1-E3
SI4850EY-T1-E3

Vishay/Siliconix

MOSFET 60 Volt 8.5 Amp 3.3W

Data Sheet

0-1: $1.01
1-25: $0.79
25-50: $0.74
50-100: $0.71
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
Si4800
Si4800

Other


Data Sheet

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SI4800,518
SI4800,518


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Data Sheet

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SI4800BDY-T1-E3
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Vishay/Siliconix

MOSFET 30V 9A 2.5W

Data Sheet

0-1: $0.46
1-25: $0.35
25-50: $0.33
50-100: $0.31
SI4800BDY-T1-GE3
SI4800BDY-T1-GE3

Vishay/Siliconix

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Data Sheet

0-1: $0.44
1-10: $0.31
10-50: $0.31
50-100: $0.30
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SI4800DY

Vishay/Siliconix

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Data Sheet

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Vishay/Siliconix

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Data Sheet

Negotiable