Product Summary

The MMBT3906LT1G is a General Purpose Transistor.

Parametrics

MMBT3906LT1G absolute maximum ratings: (1) Collector Emitter Voltage VCEO: -40Vdc; (2) Collector Base Voltage VCBO: -40Vdc; (3) Emitter Base Voltage VEBO: -5.0Vdc; (4) Collector Current Continuous IC: -200mAdc.

Features

MMBT3906LT1G feature: (1)Thermal Resistance Junction to Ambient RθJA: 556 ℃/W; (2)Thermal Resistance Junction to Ambient RθJA: 417 ℃/W; (3)Junction and Storage Temperature TJ, Tstg: -55℃ to +150℃; (4)Pb-Free Packages are Available.

Diagrams

MMBT3906LT1G package dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MMBT3906LT1G
MMBT3906LT1G
ON Semiconductor
Transistors Bipolar (BJT) 200mA 40V PNP
Data Sheet
0-1: $0.07
1-25: $0.06
25-100: $0.03
100-500: $0.02
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MMBT 2222A LT1
MMBT 2222A LT1
Infineon Technologies
Transistors Bipolar (BJT) AF TRANS GP BJT NPN 40V 0.6A
Data Sheet
0-1: $0.30
1-10: $0.20
10-100: $0.09
100-500: $0.04
MMBT 2907A LT1
MMBT 2907A LT1
Infineon Technologies
Transistors Bipolar (BJT) AF TRANS GP BJT PNP 60V 0.6A
Data Sheet
0-1: $0.30
1-10: $0.20
10-100: $0.09
100-500: $0.04
MMBT 3904 LT1
MMBT 3904 LT1
Infineon Technologies
Transistors Bipolar (BJT) AF TRANS GP BJT NPN 40V 0.2A
Data Sheet
0-1: $0.08
1-10: $0.07
10-100: $0.04
100-500: $0.03
MMBT 3904 LT3
MMBT 3904 LT3
Infineon Technologies
Transistors Switching (Resistor Biased) NPN Silicon Switch TRANSISTOR
Data Sheet
Negotiable 
MMBT 3906 LT1
MMBT 3906 LT1
Infineon Technologies
Transistors Bipolar (BJT) AF TRANS GP BJT PNP 40V 0.2A
Data Sheet
0-1: $0.10
1-10: $0.07
10-100: $0.05
100-500: $0.03
MMBT A06 LT1
MMBT A06 LT1

TRANSISTOR AF NPN SOT-23
Data Sheet
Negotiable