Product Summary
The IRF7831TRPBF is a Power MOSFET.
Parametrics
IRF7831TRPBF absolute maximum ratings: (1)VDS Drain-to-Source Voltage: 30 V; (2)VGS Gate-to-Source Voltage: ±12 V; (3)ID @ TA = 25℃ Continuous Drain Current, VGS @ 10V: 21A; (4)ID @ TA = 70℃ Continuous Drain Current, VGS @ 10V: 17A; (5)IDM Pulsed Drain Current: 170A; (6)PD @TA = 25℃ Power Dissipation: 2.5W; (7)PD @TA = 70℃ Power Dissipation: 1.6W; (8)Linear Derating Factor: 0.02W/℃; (9)TJ TSTG Operating Junction and Storage Temperature Range: -55℃ to +150℃.
Features
IRF7831TRPBF features: (1)Very Low RDS(on) at 4.5V VGS; (2)Ultra-Low Gate Impedance; (3)Fully Characterized Avalanche Voltage and Current; (4)100% Tested for RG.
Diagrams
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![]() IRF7831TRPBF |
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