(China (Mainland))
Product Summary
The SIA421DJ-T1-GE3 is a P-Channel 30 V (D-S) MOSFET. Applications include:Load Switch for Portable Devices and Buck Converter.
Parametrics
SIA421DJ-T1-GE3 absolute maximum ratings: (1)Drain-Source Voltage VDS: - 30 V; (2)Gate-Source Voltage VGS: ± 20 V; (3)Continuous Drain Current (TJ = 150℃) ID: - 7.9 A; (4)Pulsed Drain Current IDM: - 35 A; (5)Continuous Source-Drain Diode Current: - 2.9 A; (6)Maximum Power Dissipation: 3.5 W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: - 55℃ to 150℃; (8)Soldering Recommendations (Peak Temperature): 260℃.
Features
SIA421DJ-T1-GE3 features: (1)TrenchFET Power MOSFET; (2)New Thermally Enhanced PowerPAK SC-70 Package; (3)Small Footprint Area; (4)Low On-Resistance.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 SIA421DJ-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 12A 19W 35mohm @ 10V |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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SIA408DJ-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 4.5A 17.9W |
Data Sheet |
Negotiable |
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SiA411DJ |
Other |
|
Data Sheet |
Negotiable |
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|
SIA411DJ-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 12A 19W 30mohm @ 4.5V |
Data Sheet |
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SiA413DJ |
Other |
|
Data Sheet |
Negotiable |
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|
SIA427DJ-T1-GE3 |
Vishay/Siliconix |
MOSFET 8V 12A 19W 13mohms @ 4.5V |
Data Sheet |
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|
SIA421DJ-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 12A 19W 35mohm @ 10V |
Data Sheet |
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