(China (Mainland))
Product Summary
The IRF640NPBF is a Fifth Generation HEXFET from International Rectifier. The IRF640NPBF utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF640NPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitablefor high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
Parametrics
IRF640NPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 18 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 13 A; (3)Pulsed Drain Current, IDM: 72 A; (4)PD @TC = 25℃ Power Dissipation: 150 W; (5)Linear Derating Factor: 1.0 W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Single Pulse Avalanche Energy, EAS: 247 mJ; (8)Avalanche Current, IAR: 18 A; (9)Repetitive Avalanche Energy, EAR: 15 mJ; (10)Peak Diode Recovery dv/dt, dv/dt: 8.1 V/ns; (11)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +175℃; (12)Soldering Temperature, for 10 seconds 300 (1.6mm from case)℃; (13)Mounting torque, 6-32 or M3 srew: 10 lbf·in (1.1N·m).
Features
IRF640NPBF features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated; (6)Ease of Paralleling; (7)Simple Drive Requirements; (8)Lead-free.
Diagrams
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 IRF640NPBF |
International Rectifier |
MOSFET MOSFT 200V 18A 150mOhm 44.7nC |
Data Sheet |
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