(China (Mainland))
Product Summary
The IRFS4410ZPBF is a HEXFET Power MOSFET.
Parametrics
IRFS4410ZPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V (Silicon Limited): 97 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V (Silicon Limited): 69 A; (3)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V (Package Limited): 75 A; (4)IDM Pulsed Drain Current: 390 A; (5)PD @TC = 25℃ Maximum Power Dissipation: 230 W; (6)Linear Derating Factor: 1.5 W/℃; (7)VGS Gate-to-Source Voltage: ± 20 V; (8)dv/dt Peak Diode Recovery: 16 V/ns; (9)TJ TSTG Operating Junction and Storage Temperature Range: -55 to +175℃; (10)Soldering Temperature, for 10 seconds (1.6mm from case): 300℃; (11)EAS (Thermally limited) Single Pulse Avalanche Energy: 242 mJ.
Features
IRFS4410ZPBF features: (1)Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; (2)Fully Characterized Capacitance and Avalanche SOA; (3)Enhanced body diode dV/dt and dI/dt Capability; (4)Lead-Free.
Diagrams
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 IRFS4410ZPBF |
International Rectifier |
MOSFET |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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Quantity | ||||||||||||
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IRFS11N50A |
Vishay/Siliconix |
MOSFET N-Chan 500V 11 Amp |
Data Sheet |
Negotiable |
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IRFS11N50APBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 11 Amp |
Data Sheet |
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IRFS11N50ATRL |
Vishay/Siliconix |
MOSFET N-Chan 500V 11 Amp |
Data Sheet |
Negotiable |
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IRFS11N50ATRLP |
Vishay/Siliconix |
MOSFET N-Chan 500V 11 Amp |
Data Sheet |
Negotiable |
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IRFS11N50ATRR |
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MOSFET N-CH 500V 11A D2PAK |
Data Sheet |
Negotiable |
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IRFS11N50ATRRP |
Vishay/Siliconix |
MOSFET N-Chan 500V 11 Amp |
Data Sheet |
Negotiable |
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